| PART |
Description |
Maker |
| AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30
64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22
256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22
1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22
128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
| HYC532410-70 HYC532200-70 HYC532100-70 HYC536410-7 |
4M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88
2M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88
1M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88
4M X 36 MULTI DEVICE DRAM CARD, 70 ns, XMA88
|
Hynix Semiconductor, Inc.
|
| AEPDH4M8LB-10P |
4M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| MF18M1-J17AT |
8M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88 CARD-88
|
Micross Components
|
| MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90
128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
| M2V56S20TP-8 M2V56S40TP-8 M2V56S30TP-8 |
256M synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V56S40TP-8 |
256M Synchronous DRAM 256M同步DRAM
|
Mitsubishi Electric, Corp.
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EBJ21UE8BBS0-AE-F |
256M X 64 DDR DRAM MODULE, ZMA204
|
ELPIDA MEMORY INC
|
| HMT325S6BFR6C-H9 |
256M X 64 DDR DRAM MODULE, DMA204
|
HYNIX SEMICONDUCTOR INC
|
| EDJ1104BDSE-GN-F |
256M X 4 DDR DRAM, 0.225 ns, PBGA78
|
ELPIDA MEMORY INC
|
|
